Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons

The reversible transition between the on and off states of threshold switches under a constant pulse generates voltage oscillation, which can be exploited for compact neuron element in neuromorphic systems. Because voltages play an important role oscillation behavior, area thickness scaling analysis NbO x -based devices is performed to identify underlying mechanism. ( $V_{th}$ ) sensitive device area, indicating that state achieved by local formation conductive phase. On other hand, area-independent hold notation="LaTeX">$V_{\mathrm{ hold}}$ becomes smaller due higher compliance current increased temperature ambient, implies spontaneous dissolution phase retarded. Through HSPICE simulation, we reveal greater difference notation="LaTeX">$\text{V}_{\mathrm{ th}}$ enables high degree freedom frequency modulation.